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Fabien Massabuau is a postdoctoral research associate at the Cambridge Centre for Gallium Nitride in the Department of Materials Science and Metallurgy. His research focuses on exploring the growth and characterisation of novel wide band gap semiconducting materials for ultraviolet light emitting diode applications. He also supports the GaN group’s research effort in structural and optical characterisation of III-Nitride materials and devices, including light emitting diodes, lasers and transistors.
Fabien obtained an engineering diploma from Ecole Centrale de Lyon and a Master degree in materials science from Universite Claude Bernard Lyon I in 2011. He went on to the University of Cambridge for his PhD, during which he investigated how the nanostructure of InGaN/GaN quantum wells in light emitting diodes would influence the luminescence properties. He graduated in 2015 and was granted an EPSRC doctoral prize to develop a methodology for advanced characterisation of III-Nitrides semiconductors.