Leyi (Joy) has been a Newton International Fellow in the Department of Materials Science and Metallurgy at Cambridge since October 2024. Prior to this, she completed her bachelor’s degree in Chemistry at the Chinese University of Hong Kong (CUHK) and a PhD in Materials Science at the National University of Singapore. During her PhD, she focused on defect formation in two-dimensional (2D) semiconductors, exploring their potential as quantum light sources—fundamental building blocks for quantum technology.

Her current research involves nanoscale characterization of the interface between dielectrics and 2D semiconductors, a key aspect of field-effect transistors. To deepen her understanding, she employs a range of techniques, including atom-resolved electron microscopy, optical, and electrical measurements. Her goal is to connect atomically precise phenomena with macroscopic material properties to improve device performance.